Power Cree licences GaN power IP to Transphorm

Power Cree licences GaN power IP to Transphorm

2013/08/06

Cree has signed a non-exclusive worldwide patent license agreement with Transphorm, providing access to Cree’s family of GaN HEMT and GaN Schottky diode patents for use in the field of power conversion.

Before it was best known for lighting LEDs, Cree was known for GaN RF transistors.

GaN is shaping up as the material of the future for power conversion at 1.2kV (solar, for example), and high-performance conversion at 600V for mains PSUs.

HEMTs – high electron mobility transistors – are far faster and offer better figures of merit than their silicon power counterparts. They were originally invented by Fujitsu for RF power.

“Over the last 17 years, Cree has invented technology that enabled the introduction of reliable GaN HEMT devices,” said John Palmour, Cree co-founder and CTO. “Many of these inventions can and are expected to be used by others to manufacture devices in GaN power management.”

“The licensed family of patents addresses various aspects of making GaN power devices including nitride materials, HEMT and Schottky diode designs and processing technology. While GaN HEMTs are already used extensively in RF markets by Cree and others, their use in power conversion markets has been targeted by Transphorm and a number of other companies,” added a spokeswoman for Cree.

Transphorm has a range of discrete GaN HEMTs and Schottkys, as well as motor drives – the picture of a three phase 370V motor drive development board.

HEMTs are normally-on devices, requiring negative bias to turn them off which is both inconvenient and non-fail-safe. Cascode operation with a low-voltage silicon power mosfet allows them to be operated as normally-off devices.

For switching efficiency and precision, the cascode technique is at its best with a carefully matched HEMT and mosfet pair. Transphorm’s discrete normally-off GaN HEMTs are co-packaged pairs (left).

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